反应溅射AlN的模拟

Modeling of Reactive Sputtering of AlN

研究了用反应磁控溅射的方法制备氮化铝薄膜。由于铝和氮化铝二次电子发射系数有很大的不同,导致制备时会在金属模式和化合物模式间出现一个很大的跃迁。为了准确描绘实验结果,建立了一个反应溅射模型。该模型以Berg在1988年提出的模型为基础,包括了靶上二次电子发射系数的变化。利用该模型能够预测溅射行为,计算结果与实测值相符。

Reactive sputtering of aluminum nitride thin films has been studied. A drastic transition between metallic and compound modes has been observed due to a large difference in the secondary electron emission coefficients of aluminum and aluminum nitride. To describe the experimental results quantitatively, a reactive sputtering model has been developed. The model is fundamentally based on Berg＇s model in 1988 , but includes the change in the secondary emission coefficient of the target. Based on this model, it is possible to predict the reactive sputtering behaviour., the calculated results agree well with measurements.