用脉冲电源溅射ZnO薄膜时脉冲及工艺条件对靶电压的影响

Reducing Target Voltage by Adjusting Growth Conditions of ZnO∶Al Films

用磁控溅射法制备ZnO∶Al透明导电膜时,降低靶电压可以减少溅射等离子体中被靶背反射回的中性离子和负氧离子对基片的轰击,提高薄膜的质量,降低薄膜电阻。本文研究了用中频脉冲直流溅射法和Zn∶Al合金靶反应溅射制备ZnO∶Al透明导电膜时,脉冲参数,如脉冲频率、反向脉冲幅度、反向脉冲时间、功率、氧氩比、溅射气压等工艺条件对靶电压的影响。结果表明,延长反向脉冲时间是降低靶电压的最有效方法。当反向时间由2μs增加到10μs时,靶电压降低了60%以上。

The influence of various film growth conditions, such as the＇ratio of oxygen and hydrogen,the sputtering pressure,the power, frequency and wave-shape of the mid-frequency pulse, etc. ,on the target voltage was studied to lower the target voltage in growing ZnO：Al films.the results show that the pulse reverse time strongly affects the target voltage. For example as the reverse time increases from 2 μs to 10 μs,the target voltage drops by over 60 percent.