摘要
介绍了双端口2．5μm硅栅CMOS静态RAM（L68HC34）的研制过程、工艺设计和工艺控制；分析了控制VT及降低R多的各种方法；并阐述了对发展IC的重要意义。
In this paper the manufacturing and process technology for 2. 5μm silicon - gate CMOS dual - port SRAM are described with respect of the process design and process control, and the control methods for VT and RP are also discussed here.
出处
《微处理机》
1997年第2期13-16,共4页
Microprocessors
关键词
SRAM
单晶硅
多晶硅
硅栅
掺杂
IC
CMOS
SRAM, Monocrgstalline silicon,polycrgstalline silicon, silicon gate,dope
