氮化硅湿法蚀刻中热磷酸的蚀刻率

Hot Phosphoric Acid Etch Rate to Si_3N_4 in Wet Etching

在半导体湿法蚀刻中,热磷酸广泛地用于对氮化硅的去除工艺,实践中发现高温下磷酸对氮化硅蚀刻率很难控制。从热磷酸在氮化硅湿法蚀刻中的蚀刻原理出发,分析了影响蚀刻率的各个因素,并通过实验分析了各个因素对蚀刻率的具体影响。根据目前广泛应用于生产中的技术,介绍了如何对相关因素进行控制调节,为得到稳定的热磷酸蚀刻率提供了方向。

In wet etching process of semiconductor manufacturing,the hot phosphoric acid is used widely for Si3N4 remove process.It is very difficult to control hot phosphoric etch rate to Si3N4 in practice.According to the reaction principle of hot phosphoric acid etching Si3N4,the factors that would affect etch rate was analyzed,and the effects of these factors were also analyzed through experiments.Based on the technology that applied in production widely at present,how to control and adjust correlate factors was introduced,the way to get stable hot phosphoric etch rate was given.