摘要
为了改善垂直腔半导体光放大器增益饱和特性,基于其结构上的特点,引入了增益增强因子,修正了边界条件,采用建立腔内光子数与输入信号光功率关系的研究方法,分析了影响垂直腔半导体光放大器增益饱和特性因素。并进行了理论分析和实验论证,取得了影响增益饱和特性的4个关键数据。结果表明,有源区截面积、顶层镜面反射率、抽运功率、自发辐射因子影响着增益饱和特性,优化相关参数,可以将输入饱和功率提高到-2dBm。这一结果对如何改善垂直腔半导体光放大器增益饱和特性是有帮助的。
In order to improve the gain saturation property of vertical-cavity semiconductor optical amplifiers （ VCSOAs ） , based on the structure character, applying gain enhancement factor and modifying the boundary condition, the relation between input signal power and photon density was derived to study the gain saturation property. The calculation result was agreement with the experiment. Four factors affecting property of gain saturation were obtained. The results showed that the active region area ,top mirror refleetivity, pump power, spontaneous emission factor affected the property of gain saturation. After optimizing the parameter ,the input saturation power could arrive -2dBm. It is useful to improve the gain saturation property of VCSOAs.
出处
《激光技术》
CAS
CSCD
北大核心
2007年第5期496-499,502,共5页
Laser Technology
