一维ZnE(E=S，Se)纳米结构的气相合成

Vapor Growth of One-Dimensional ZnE(E=S,Se) Nanowires

在NiE(E=S,Se)纳米粒子辅助下,采用CVD方法,在NiE(E=S,Se)-Zn系统中成功生长出立方闪锌矿结构一维ZnE(E=S,Se)纳米线。生长的ZnSe和ZnS纳米线长度达几十微米,具有接近理想化学计量比的成分和较高的结晶质量。研究表明,ZnE纳米线生长过程中,ZnNi合金充作实际的催化剂,生长遵循氧化还原反应助VLS机理。基于此机理,通过调控NiE纳米粒子的尺寸可以有效控制ZnE纳米线的直径。

ZnE（E=S, Se） nanowires were successfully prepared in NiE（E=S, Se）-Zn system via a chemical vapor deposition （CVD） route. As-synthesized ZnE nanowires were characterized by means of XRD, EDS, SEM and PL spectra, which have the zinc-rich composition and the high crystalline quality. The ZnNi alloy was proved to play a key role during ZnE nanowire growth. The redox reaction actived VLS mechanism was found to govern the growth of ZnE nanowire, which bring about a case that the diameter of ZnE nanowires was controlled by the size ofNiE nanocrystal.