PSII法制备DLC膜的纳米摩擦性能研究

On the nanotribology of DLC thin films prepared by PSII

微机电系统(MEMS)的研究引起了人们的极大关注,摩擦行为是影响MEMS性能的关键因素之一。本文采用等离子源离子注入(PSII)技术在硅衬底上制备薄膜,利用Raman光谱表征制备薄膜的类金刚石特性。详细介绍了采用原子力显微镜(AFM)进行纳米摩擦实验的原理,并利用其研究制得DLC膜的纳米摩擦特性。研究结果表明,制得DLC膜的摩擦系数较小,具有耐磨损性能,而且反应气体流量对薄膜的纳米摩擦特性有较大影响。PSII技术制备的DLC膜具有较好的纳米摩擦特性,并有望使可动MEMS的摩擦问题得到真正意义上的突破。

The emergence of microelectromechanical systems （MEMS） has attracted increasing attention, and the tribology behavior plays an important role in the performance of MEMS. DLC thin films were deposited on Si substrates by plasma source ion implantation （PSII） and characerized by Raman spectroscopy. Describes in detail the principle on which the nan-otribology measurement is performed by using the atomic force microscopy （AFM） to evaluate the nanotribological behavior of DLC thin films. The results showed that the friction factor is low with high wearabity, and the nanotribology behavior of the thin films is affected greatly by the reactive gas flow rate. Superior tribological characteristics of DLC films prepared by PSII are proved by the measurement, which make it possible to resolve substantially the friction problem of MEMS.