硅基量子点的制备及其发光特性

Preparation and its luminescence properties of Si-based quantum dot

硅基光电子学无疑是今后光电子学发展的方向。这就要求硅基材料能够满足发光器件的要求，从而达到光电集成的目的。因为硅体材料具有非直接带隙的特点，其发光效率很低，所以利用硅基低维量子结构，尤其是量子点结构提高硅基材料的发光性能一直是国内外本领域的一个研究特点。本文对近年来硅基量子点的制备及发光特性研究所取得的进展和结果进行了总结和评述。

Si-based optoelectronics will be one of the main topics in the optoelectronics research area in the near future.Si and Si-based materials have very low luminescence efficiency due to their indirect band gap structure.Therefore the band structure of the materials has to be tailored by using energy band engineering so as to meet the requirements of light emitting device for realizing optoelectronic integration.One of the ways to improve a luminescence efficiency of Si-based materials is to fabricate low dimensional quantum structure i.e.quantum dots by various methods.Quantum dot preparation is becoming a subject both in China and abroad.This paper presents a concise review and comment on the development of preparation and luminescence of Si-based quantum dots in recent years.