摘要
介绍了InGaN单量子阱超高亮度蓝色LED的结构和性能,其发光强度、峰值波长和光谱半宽在正向电流为20mA时,分别为8cd、450nm和25nm。
This paper reports configurations and properties of InGaN single-quantum-well (SQW) superbright blue LED whose luminous intensity at forward current of 20 mA is about 8 cd with the peak wavelength of 450 nm and the full width at half-maximum of 25 nm.
出处
《半导体光电》
CAS
CSCD
北大核心
1997年第2期89-91,共3页
Semiconductor Optoelectronics