摘要
报道了用于驱动ＧａＡｓＭＭＩＣ射频开关的高速ＧａＡｓ驱动器的设计与制作。测试结果为：同相输出时，上升时间６ｎｓ，延迟时间４．８ｎｓ，下降时间６ｎｓ，延迟时间４ｎｓ；反相输出时，上升时间６．５ｎｓ，延迟时间３ｎｓ，下降时间１０ｎｓ，延迟时间６．７ｎｓ。与ＧａＡｓＭＭＩＣ射频开关进行了联试，结果不仅没有影响开关的射频特性。
This paper reported the design and fabrication of high speed GaAs driveres for GaAs MMIC RF switches.The measurement results were t r=6ns,t d1 =4 8ns,t f=6ns,t d2 =4ns with same phase output and t r=6 5ns,t d1 =3ns,t f=10ns,t d2 =6 7ns with opposite phase output.When the driver worked with GaAs MMIC RF switches,the switches′s RF characteristies weren′t affected and their speed remained unchanged.
出处
《半导体情报》
1997年第3期28-32,共5页
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