钨硅/砷化镓肖特基接触的热稳定性分析

The High Temperature Stability of WSi/GaAs Schottky Contact

研究了以ＷＳｉ０．６复合材料作为靶源，采用直流磁控溅射工艺成膜，不同退火温度下ＧａＡｓ衬底材料上ＷＳｉ０．６膜层的特性。包括ＷＳｉ０．６／ＧａＡｓ系统断面ＳＥＭ分析，ＡＥＳ界面机构分析、表面形貌分析及金属－半导体肖特基势垒特性分析。实验结果表明，在氩气压力为１３３Ｐａ的气氛下，直流磁控溅射的ＷＳｉ０．６膜层与ＧａＡｓ衬底所构成的系统具有良好的物理、化学和电学性能。

The characteristics of the tungsten silicon thin films formed by dc magnetron sputtering on GaAs substrates were investigated for different annealing temperatures.The surface of the thin film,cross section and interface of the WSi/GaAs contact and the characteristics of the metal semiconductor schottkey barriers were studied by means of XRD,AES,SEM and the forward I V measurement.It has been shown that the WSi film has good high temperature stability,and is suitable for schottky gate metallization in self aligned GaAs MESFET′s.