锂掺杂p型氧化锌薄膜的制备

The Fabrication of p-type ZnO Film Doped by Lithium

通过将含有原子百分含量为2%锂(2at%)的锌锂(Zn-Li)合金薄膜在500℃氮气氛中退火2 h,然后在700℃氧气氛下退火1 h的方法分别制备出p型锂掺杂的氧化锌(ZnO:Li)薄膜。通过He-Cd激光器的325 nm线激发,测量了样品低温(12 K)发光光谱,并根据Zn-Li合金薄膜的低温发光光谱特征,计算出(LiZn-N)复合受主能级的位置位于价带顶137 meV处。

A p-type ZnO film is fabricated by annealing the Zn-Li alloy film with 2 at% Lithium in two steps, first, annealing at 500 ℃ for 2 h in a N2 flow, and then at 700 ℃ for 1 h in an O2 flow. Through the excitation of 325 nm radial of He-Cd laser system,the low-temperature （12 K） photoluminescence （PL） is measured and then the optical level of the Lizn-N complex acceptor is calculated to be about 137 meV.