摘要
气体电子倍增器(GEM,Gas Electron Multiplier)是近些年发展的一种新的气体探测器,具有计数率和位置分辨率高等优点,在粒子物理和X光成像等领域有着广泛的应用前景,近些年来得到了很快的发展.该探测器发展的关键问题之一就是GEM膜结构的制造,该结构需要利用光刻等多项技术来完成,工艺复杂,研制困难.本文介绍了开发GEM膜结构的研究结果,通过干法和湿法腐蚀的研究和对比,优化出GEM膜结构制造的一种工艺过程,并利用该工艺成功完成了GEM膜结构的制造,为国内GEM气体探测器的研究和应用奠定了基础.
GEM, which has rapidly been developed in recent years as a new type of gas detector, has advantages of high position resolution and counting rate with a wide potential application in particle physics and X-ray imaging and etc. One of the key techniques of GEM＇s development is the structure fabrication of the PI film for the detector, which is difficult to be done by the lithography process. In this paper we present the structure fabrication process of GEM＇s PI film, and the result of our work about it. We chose wet-etching and dry-etching to make the structure holes of PI film, and find that wet＊etching is better way to get perfect holes of GEM＇s PI film for future application with acceptable price. The successful fabrication of GEM＇s film structures is helpful to develop the domestic research of GEM detector. The performance of the GEM detector with such PI film still need more detail study.
出处
《高能物理与核物理》
CSCD
北大核心
2007年第10期929-932,共4页
High Energy Physics and Nuclear Physics
