期刊文献+
任意字段
题名或关键词
题名
关键词
文摘
作者
第一作者
机构
刊名
分类号
参考文献
作者简介
基金资助
栏目信息

ZnO基紫外光电探测器的研究进展 被引量：8

Research Progress in ZnO-based UV Photodetector
下载PDF
导出
摘要 ZnO基紫外光探测器被认为是目前研究紫外探测器的重点之一。简要介绍了ZnO基紫外光探测器采用的基本结构:包括光电导型、肖特基势垒型以及p-n结型;比较了不同结构的ZnO紫外光探测器所具有的优缺点,对光电导型、肖特基势垒型以及p-n结型紫外光探测器近几年的发展分别进行了详细评述。 ZnO-based ultraviolet photodector are very promising due to their excellent properties. In this article the basic structures of photoconductive, schottky barrier, p-n junction and other types of ZnO ultraviolet photodetectors are introduced briefly. The characteristics of the different photodetector structures are compared, and the developments of the above UV photodectors in recent years are reviewed detailedly.
作者 刘云燕 袁玉珍 李洁 高绪团
机构地区 山东理工大学物理与光电信息学院
出处 《材料导报》 EI CAS CSCD 北大核心 2007年第10期9-11,16,共4页 Materials Reports
基金 国家自然科学基金(50402019) 山东理工大学项目基金(303018)
关键词 ZnO基 紫外光探测器 MSM 光电导 肖特基势垒 P-N结 ZnO based, UV detector, MSM, photoconductive, schottdy barrier, p-n junction
分类号 TN23 [电子电信—物理电子学]
  • 相关文献

参考文献25

  • 1Look D C, et al. Point detect Characterization of GaN and ZnO[J]. Mater Sci Eng B, 1999,66(1-3) : 30
  • 2Reynolds J D C, et al. Time-resolved photoluminescence life time measurements of the P5 and P6 free excitons in ZnO[J]. J Appl Plays, 2000,88(4): 2152
  • 3Liu Y,Gorla C R, Liang S, et al. Ultraviolet detector based on epitaxial ZnO films grown by MOCVD[J]. J Electronic Mater, 2000,29 (1) : 69
  • 4叶志镇,张银珠,陈汉鸿,何乐年,邹璐,黄靖云,吕建国.ZnO光电导紫外探测器的制备和特性研究[J].电子学报,2003,31(11):1605-1607. 被引量：33
  • 5Zheng X G, Li Sh Q, Zhao J P, et al. Photoconductive ultraviolet detectors based on ZnO films[J]. Appl Surf Sci, 2006,253 (4): 2264
  • 6Pimentel A, Fortunato E, Goncalves A, et al. Polycrystalline intrinsic zinc oxide to be used in transparent electronic devices[J]. Thin Solid Films,2005,487(1-2):212
  • 7Xu Q A,Zhang J W,Ju K R, et al. ZnO thin film photoconductive ultraviolet detector with fast photoresponse [J]. J Crystal Growth,2006,289(1) : 44
  • 8Liu K W, Ma J G, Zhang J Y, et al. Ultraviolet photoconductive detector with high visible rejection and fast photoresponse based on ZnO thin film [J]. Solid-State Electronics, 2007,51:757
  • 9Kazuto Koike, Kenji Hama, Ippei Nakashima, et al. Molecular beam epitaxial growth of wide bandgap ZnMgO alloy films on (111)-oriented Si substrate toward UV-detector applications[J]. J Crystal Growth,2005,278 (1-4): 288
  • 10Hullavarad S S, et al. Accelerated reliability test inputs in analyzing the device response of MgZnO based UV detector. Materials Research Society Symposium-Proceedings, Materials and Devices for Smart Systems,2003,785:495

二级参考文献24

  • 1张德恒,D.E.B_(RODIE).用射频溅射方法制备的多晶ZnO薄膜的光响应与其结构变化[J].物理学报,1995,44(8):1321-1327. 被引量：12
  • 2Bagnall D M,Chen Y F,Zhu Z,et al.Optically pumped lasing of ZnO at room temperature.Appl Phys Lett,1997,70:2230.
  • 3Cao H,Zhao Y G,Ho S T,et al.Random laser action in semiconductor powder.Phys Rev Lett,1999,82:2278.
  • 4Makino T,Tuan N T,Sun H D,et al.Temperature dependence of near ultraviolet photoluminescence in ZnO/(Mg,Zn) Omultiple quantum wells.Appl Phys Lett,2001,78:1979.
  • 5Wu X L,Siu G G,Fu C L,et al.Photoluminescence and cathodoluminescence studies of stoichiometric and oxygen-deficient ZnO films.Appl Phys Lett,2001,78:2285.
  • 6Reynolds D C,Look D C,Jogai B,et al.Polariton and free-exciton-like photoluminescence in ZnO.Appl Phys Lett,2001,79:3794.
  • 7Ip K,Baik K H,Overberg M E,et al.Effect of high-density plasma etching on the optical properties and surface stoichi-ometry of ZnO.Appl Phys Lett,2002,81:3546.
  • 8Hu J,Gordan R.Textured aluminum-doped zinc oxide thin films from atmospheric pressure chemical-vapor deposition.J Appl Phys,1992,71:880.
  • 9Look D C,Reynolds D C,Hemsky J W.Production and annealing of electron irradiation damage in ZnO.Appl Phys Lett,1999,75:811.
  • 10Park W I,Jun Y H,Jung S W,et al.Excitonic emissions observed in ZnO single crystal nanorods.Appl Phys Lett,2003,82:964.

共引文献41

同被引文献41

引证文献8

二级引证文献16

材料导报
2007年 第10期

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部