摘要
采用电子辅助热灯丝化学气相沉积(EA-CVD)方法沉积大面积金刚石膜,在金刚石膜的沉积过程中,偏流对金刚石膜沉积的影响会直接影响着金刚石膜的生长和质量。用Raman、SEM等手段对金刚石膜的生长特性进行了表征。
Large area diamond films were deposited by EA-CVD method. During deposition, the growth and quality of diamond films were influenced by the change of the distance between the filament and the substrate. The growth property of diamond film was characterized by the use of Laman spectrum and scan transmission electron microscopy （SEM）.
出处
《长春理工大学学报（自然科学版）》
2007年第3期108-109,113,共3页
Journal of Changchun University of Science and Technology(Natural Science Edition)
基金
吉林省科技厅资助项目
低成本高能量密度锂离子电池正极材料的研制
合同编号:10647104吉教科合字[2005]第85号
关键词
金刚石膜
偏流
膜的质量
diamond film
bias current
quality of diamond films
