摘要
该文研究设计一种新型ISFET/REFET/PRE传感器与信号检测电路集成于一体的芯片系统。采用商业标准CMOS工艺实现了基础集成芯片,探索研究与集成芯片兼容的敏感薄膜制备技术及其相关后续工艺,着重研究电聚合法制备的H^+敏感PPy膜;与采用低温Ta_2O_5敏感薄膜技术研制的集成芯片进行了比较。集成芯片具有灵敏度54mV/pH,响应时间0.1s,在pH1~12范围内线性相关系数99.99%的优良性能。
A new type of System-On-Chip (SOC) integrated with ISFET/REFET/PRE and their signal detection circuits is developed. Carring out the basic chip with commercial standard CMOS processes, the preparation technique of sensitivity membrane compatible with the SOC and interrelated follow-up processes are explored, the H. sensitive Polypyrrole (Ppy) membrane is emphatically studied by electrochemical polymerization; It is compared with the SOC which developed by low temperature Ta2O5 preparation technique. The new SOC has the sensitivity of 54mV/pH, response time of 0.1s, linear correlation coefficient of 99.99% within the pH range from 1 to 12.
出处
《电子与信息学报》
EI
CSCD
北大核心
2007年第10期2525-2528,共4页
Journal of Electronics & Information Technology
基金
国家自然科学基金(90307014
60672019)资助课题
关键词
离子敏场效应管
片上系统
聚吡咯
五氧化二钽
敏感膜
Ion Sensitive Field Effect Transistor(ISFET)
System-On-Chip(SOC)
Polypyrrole
Ta2O5
Sensitive membrane