单根一维TiO_2纳米线的电子输运性能

Electrical Transport Properties of Individual TiO_2 Nanowire in One Dimension

采用电化学诱导溶胶-凝胶法,在多孔氧化铝模板(AAO)的纳米孔道内制备了直径分别为60和20nm的锐钛矿型TiO2纳米线阵列.利用原子力显微镜(AFM)技术,在半接触模式下得到了TiO2纳米线的形貌像,在接触模式下测量了单根TiO2纳米线的I-V曲线.TiO2纳米线的电子输运性能表现为半导体的性质.TiO2纳米线的导通电压值明显小于TiO2块体,并且随着TiO2纳米线直径的减小,导通电压值增大.

The anatase TiO2 nanowire arrays with 60 nm diameter and 20 nm diameter were prepared within the nanochannels of anodic aluminum oxide （AAO） template by an electrochemically induced sol-gel method. Atomic force microscopy （AFM） technique was applied to map topographic image at half-contact mode and to measure current- voltage characteristics of individual TiO2 nanowire at contact mode. The I-V characteristics of individual TiO2 nanowire by AFM revealed semiconductor characteristics. The bias voltage resulting in a measurable current on individual TiO2 nanowire was much lower than that on the bulk TiO2 materials, and its value increased with the diameter of individual nanowire decreasing.