摘要
制备了具有修饰层的有机薄膜场效应晶体管,采用高掺杂Si作为栅极,传统的无机绝缘材料SiO2作为栅绝缘层,有机绝缘材料PMMA或OTS作为修饰层,CuPc作为有源层,Au作为源、漏极.测试结果表明,采用经过修饰的栅绝缘层SiO2/OTS和SiO2/PMMA的两种器件的开关电流比最高可达8×104,迁移率最高为1.22×10-3cm2/(V.s),而漏电流仅为10-10A,总体性能优于单层SiO2器件.
Organic thin film transistors （OTFTs） with a modified gate insulator are demonstrated. The modified gate insulator layers consist of SiO2 as the gate insulator and OTS （octadecyltrichlorosilane） or PMMA （poly methyl methacylate） as the modified layer. The devices with the modified layer have a field-effect mobility larger than 10^-3cm^2/（V · s） and an on/ off current ratio greater than 10^4 , while their leakage current is decreased to 10^-10 A. The results demonstrate that using modified gate insulators is an effective method to fabricate OTFTs with improved electric characteristics.
基金
国家自然科学基金资助项目(批准号:90202034
60477014
60577041)~~
关键词
有机薄膜晶体管
栅绝缘层
场效应迁移率
修饰层
organic thin-film transistors
gate dielectric
field-effect mobility
modified layer
