摘要
对RTD/HEMT串联型共振隧穿三极管进行了设计和研制.测量结果表明:最大电流峰谷比为17.6∶1,栅压对峰值电压调控能力在1.5～7.7范围内,-3dB截止频率为4GHz,此种器件可与HEMT在结构和工艺上兼容,可应用于HEMT高速电路.
The design and fabrication of a resonant tunneling transistor with an RTD/HEMT in-series structure are presented. The measurement results of the fabricated devices show that the maximum peak valley current ratio （PVCR） is 17.6 ： 1, the gate voltage modulating peak voltage ratio is in the range of 1.5-7. 7,and the -3dB cut-off frequency is about 4GHz. This device is compatible with HEMTs in the device structure and fabrication technology,and can be used in high speed circuits with HEMTs devices.
