摘要
运用2×1.7MV串列静电加速器提供的质子束,对MOCVD方法制备的GaInP/GaAs/Ge三结电池进行低能质子辐射效应研究.选质子能量为0.28,0.62和2.80MeV,辐照注量为1×1010,1×1011,1×1012和1×1013cm-2.对电池的辐射效应用I-V特性和光谱响应测试进行分析.研究结果表明:随辐照注量的增加,太阳电池性能参数Isc,Voc和Pmax的衰降幅度均增大;但随质子辐照能量的增加,Isc,Voc和Pmax的衰降幅度均减小.实验中0.28MeV质子辐照引起电池Isc,Voc,Pmax衰降最显著,三结电池中光谱响应衰降最明显的是中间GaAs电池.
GaInP/GaAs/Ge triple-junction （3J） solar cells fabricated by metal-organic chemical vapor deposition were irradiated with 0. 28,0. 62,and 2.80MeV protons at doses ranging from 1 × 10^10 to 1 × 10^13cm^-2 using a 2 ×1.7MV tandem accelerator. The performance degradation of the 3J solar cells was analyzed with current-voltage characteristics and spectral response measurements. The degradation rates of the short circuit current （Isc）, open circuit voltage （ Voc ）, and maximum power output （Pmax） were found to increase as the proton irradiation dose increased, but the degradation rates of Isc, Voc, and Pmax decreased as the proton irradiation energy increased. Irradiation with a proton energy of 0.28MeV gave rise to the highest degradation rates of Isc, Voc, and Pmax of the solar cells. Also, the spectral response of the GaAs middle cell in 3J solar cells was degraded more significantly than the GaInP top cell.
基金
国家自然科学基金(批准号:10675023)
北京市自然科学基金(批准号:1052009)资助项目~~
