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高反射率的Al_xGa_(1-x)N/Al_yGa_(1-y)N布拉格反射器的特性研究

Research on the Characteristic of Al_xGa_(1-x)N/Al_yGa_(1-y)N DBR with High Reflectivity
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摘要 简单地介绍了布拉格反射器在发光二极管中的应用概况,并从理论上分析了通过将分布式布拉格反射器应用于紫外发光二极管中可以有效抑制内部吸收,从而获得较大输出能量的原理及方法。定量分析了决定DBR系统性能的几个主要因素之间的关系,即:A.膜层禁带宽度Eg与膜层材料中Al的质量分数之间的关系;B.室温下折射系数与Al的质量分数之间的关系;C.膜层禁带宽度Eg与温度之间的关系。 An extensive summary in the application status of distributed Bragg reflectors in LED area and theoretically is analyzed its principle of suppressing the internal absorption in order to fabricate high performance especially for UV-LEDs grown on sapphire substrates with emission wavelengths below 362 nm. And a quantitative analysis on the relationship among the main factors which normally greatly influence the quality of distributed Bragg reflectors was given, such as : A. dependence of the absorption edge on the Al molar fraction, B. index of refraction at room temperature,C, influence of temperature on the optical properties, D. temperature dependence of the refractive index.
出处 《科学技术与工程》 2007年第22期5896-5897,5914,共3页 Science Technology and Engineering
关键词 分布布拉格反射器 紫外发光二极管 掺铝浓度 折射系数 DBR UV-LED Al content refractive index
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参考文献5

  • 1Yu P Y,Cardona M.Fundamentals of Semiconductors[]..1996
  • 2Shan W,Schmidt TJ,Yang X H.Temperature dependence of inter-band transitions in GaNgrown by metalorganic chemical vapor depo-sition[].Applied Physics.1995
  • 3Wang T,Parbrook P J,Harrison C N et al.Highly improved performance of a 350 nm ultraviolet light-emitting diode containing AlxGa1-xN/AlyGa1-yN distributed Bragg reflectors[].Journal of Crystal Growth.2004
  • 4Brunner D,AngererH,BustarretE, et al.Optical Constants ofEp itaxialA lGaN Films and TheirTemperature Dependence[ J][].Journal of Applied Physics.1997
  • 5Varshini Y P.Temperature dependence of the energy gap in semiconductors[].Physica.1967

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