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Optical diode behavior of photonic crystal structure with asymmetric Kerr defect 被引量:2

Optical diode behavior of photonic crystal structure with asymmetric Kerr defect
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摘要 Optical diode behavior of asymmetric one-dimensional photonic crystal with Kerr defect is numerically investigated using nonlinear transfer matrix method. In the linear case, the intensity and the phase of transmitted field are the same for the forward and backward operations. In the nonlinear case, however, the transmitted intensities are much different for the two operations, which display diode characteristic. Physical origin of the anisotropic transmission lies in the different localizations in the defect layer of the two operations. Optical diode behavior of asymmetric one-dimensional photonic crystal with Kerr defect is numerically investigated using nonlinear transfer matrix method. In the linear case, the intensity and the phase of transmitted field are the same for the forward and backward operations. In the nonlinear case, however, the transmitted intensities are much different for the two operations, which display diode characteristic. Physical origin of the anisotropic transmission lies in the different localizations in the defect layer of the two operations.
出处 《Journal of Harbin Institute of Technology(New Series)》 EI CAS 2007年第4期545-547,共3页 哈尔滨工业大学学报(英文版)
关键词 optical switching photonic band-gap materials Kerr effect 光学转换 光学材料 刻尔效应 光二极管 晶体结构
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