电感耦合等离子体-原子发射光谱法测定CPU导热硅脂中的铅和镉

Determination of Pb and Cd in Heat Conduct Silicone in CPU by ICP-AES

采用几种消解方法对样品进行前处理,建立了电感耦合等离子体-原子发射光谱法(ICP-AES)同时测定导热硅脂中铅、镉等有害金属元素的方法。结果表明:高温灰化法Pb、Cd有损失;(1+1)王水湿法消解法Pb有损失;硝酸-高氯酸湿法消解法Pb和Cd几乎无损失;该方法精密度范围为0.22%—2.40%,Pb和Cd检出限分别为0.030μg·mL-1和0.006μg·mL-1。与石墨炉原子吸收光谱法(GFAAS)相比,ICP-AES具有简单、快速、准确等特点。

Several digestion methods were used in sample pretreatment,and Pb and Cd in silicone were determined simultaneously by ICP-AES. The Pb and Cd lost in high temperature ashing method,Pb lost in （1＋1） aqua regia wet digestion method,and both Pb and Cd lost a little in HNO3- HClO4 wet digestion method. The precision is in the range of 0. 22%-2. 40%, and the detection limits are 0. 030μg · mL^-1 for Pb and 0. 006μg · mL^-1 for Cd,respectively. Comparing with GFAAS method,the ICP-AES is simple,rapid and accurate with satisfactory results.