退火温度对未掺杂ZnO薄膜的结构、电学和光学性质的影响(英文)

The Effect of Annealing Temperature on Structural, Electrical Conduction and Optical Properties of Undoped ZnO Films

本工作利用磁控溅射技术在石英衬底上生长出沿c轴择优取向的未掺杂ZnO薄膜,利用X射线衍射,光致发光,X射线光电子谱和Hall效应测量技术,研究了退火温度对结构、电学和光学性质的影响.发现真空退火可以提高ZnO的晶体和光学质量.生长的ZnO薄膜呈绝缘性质,经真空退火后变成导体,且导电类型和电性随退火温度而改变,并经590℃退火后获得p型ZnO.本文对退火影响ZnO结构、电学和光学性能的物理机制进行了讨论.

We have studied the effect of annealing temperature on structural,electrlcal and optical properties of nominally undoped Zinc oxide （ZnO） thin films with c- axis orientations by X- ray dlffractlon（XRD）, photolumlnescenee （PL）, x- ray photoelectron spectroscopy（XPS） and Hail Effect measurement. The ZnO films were grown on quartz substrates by d magnetron sputtering. Their crystalline and optical properties are improved by vacuum annealing. The as - grown ZnO film is insulating in conductivity, bat its conduction changes with annealing temperature and a p- type undeped ZnO was obtained at annealing temperature of 590℃. Mechanisms of influence of annealing on structure, optical and electric properties of ZnO are discussed in the present paper.