期刊文献+
任意字段
题名或关键词
题名
关键词
文摘
作者
第一作者
机构
刊名
分类号
参考文献
作者简介
基金资助
栏目信息

Bi_(4-x)La_xTi_3O_(12)铁电薄膜结构和光学性能研究 被引量：2

STRUCTURAL AND OPTICAL PROPERTIES OF Bi_(4-x)La_xTi_3O_(12) THIN FILMS
下载PDF
导出
摘要 用化学溶液沉积法分别在Si(100)和石英玻璃衬底上成功制备了一系列Bi4-xLaxTi3O12(BLT)铁电薄膜;用X-射线衍射仪测量了不同退火温度和不同掺镧量的BLT薄膜的结晶情况,结果显示随着退火温度的升高BLT薄膜结晶越来越好,镧的掺入并不改变钛酸铋薄膜的钙钛矿结构;用椭偏光谱仪对不同退火温度的BLT薄膜进行了椭偏光谱测量,分析得到了薄膜的光学常数谱;用激光显微拉曼光谱仪对不同掺镧量的BLT薄膜进行激光拉曼谱测量,得到了BLT薄膜振动模式随掺镧量的变化. Lanthanum-substituted bismuth titanate（BLT） thin films were deposited on Si （100） substrates and on quartz substrates by using the chemical solution deposition method. The crystallinity of BLT thin films was examined by X-ray diffraction （XRD）. X-ray diffraction analyses show that the BLT thin films are polycrystalline and the crystalline quality of the films is improved with the increasing of annealing temperature. The optical properties of the BET thin films were investigated by using a spectroscopic ellipsometry. The optical constant spectra （refractive index n and the extinction coefficient k） of the BLT thin films were obtained. Laser micro-Raman spectrometer was used to study the lattice vibration modes of the BLT thin films deposited on quartz substrates.
作者 杜凤娟 刘毅 陶科玉 阳生红 张曰理
机构地区 中山大学光电材料与技术国家重点实验室 深圳大学师范学院
出处 《红外与毫米波学报》 SCIE EI CAS CSCD 北大核心 2007年第5期332-335,共4页 Journal of Infrared and Millimeter Waves
基金 国家自然基金(50372085) 广东省科技计划项目(2004B60303001 2006A1100100)
关键词 铁电薄膜 椭偏光谱 拉曼光谱 BLT薄膜 ferroelectric films spectroscopic ellipsometry Raman spectroscopy bismuth lanthanum titanate thin film
分类号 O484 [理学—固体物理]
  • 相关文献

参考文献9

  • 1Park B H,Kang B S,Bu S D,et al.Lanthanum-substituted bismuth titanate for use in non-volatile memories[J].Nature,1999,401:682-684.
  • 2Watanae T,Funakubo H.Effect of cosubstitution of La and V in Bi4Ti3O12 thin films on the low-temperature deposition[J].Appl.Phys.Lett.,2002,80:100-102.
  • 3Hu Zhigao,Wang Genshui,Huang Zhiming,et al.Optical properties of Bi3.25La0.75Ti3O12 thin films using spectroscopic ellipsometry[J].J.Appl.Phys.,2003,93:3811-3815.
  • 4Wang G S,Meng X J,Lai Z Q,et al.Structural and optical properties of Bi3.25La0.75Ti3O12 ferroelectric thin films prepared by chemical solution routes[J].Appl.Phys.A.,2003,76:83-86.
  • 5Hu S H,Chen J,Hu Z G,et al.The optical properties of Bi3.25La0.75Ti3O12 thin films with different thickness prepared by chemical solution deposition[J].Materials Research Bulletin,2004,39:1223-1229.
  • 6苏青峰,夏义本,王林军,刘健敏,史伟民.不同取向金刚石薄膜的红外椭圆偏振光谱特性研究[J].红外与毫米波学报,2006,25(2):86-89. 被引量：6
  • 7Idink H,Srikanth V,White W B,et al.Raman study of low temperature phase transitions in bismuth titanate,Bi4Ti3O12[J].J.Appl.Phys.,1994,76:1819-1823.
  • 8Kojima S,Imaizumi R,Hamazaki S,et al.Raman scattering study of bismuth layer-structure ferroelectrics[J].Jpn.J.Appl.Phys.,1994,33:5559-5564.
  • 9程兴奎,连洁,王青圃,周均铭,黄绮,闫循领.量子阱红外探测器响应峰值波长的Raman散射测量[J].红外与毫米波学报,2005,24(2):97-99. 被引量：2

二级参考文献18

  • 1Toshihiko Makino. Analytical formulas for the optical gain of quantum well [J]. IEEE Journal of quantum electronics, 1996,32(3):493-501.
  • 2Levine B F. Tunable long-wavelength detectors using graded barrier quantum well grown by electron beam source molecular beam epitaxy [J]. Appl. Phys. Lett., 1990,57(4):383-385.
  • 3Sadal Adachi. GaAs, AlAs and AlxGa1-xAs material parameters for use in research and device applications [J]. J. Appl. Phys., 1985, 58(3):1-29.
  • 4Comfort J C.Simulation model testing [ C ].In:Extended abstracts,Annual Simulation Symposium.New York:Society for Computer Simulation,1987,185-196.
  • 5Su Q F,Lu J F,Wang L J,et al.Electrical properties of[100]-oriented CVD diamond film [ J ].Solid-State Electronics,2005,49(6):1044-1048.
  • 6Bruggeman D A G.The calculation of various physical constants of heterogeneous substances,I:the dielectric constant and conductivities of mixtures composed of isotropic substances[J].Ann.Phys.Lpz.,1935,24:636-679.
  • 7Fang Z J,Xia Y B,Wang L J,et al.An ellipsometric analysis of CVD diamond films at infrared wavelengths [ J ].Carbon.,2003,41 (5):967-972
  • 8McGeoch S P,Placido F,Gou Z,et al.Coatings for the protection of diamond in high-temperature environments[J].Diamond Relat.Mater.,1999,8(2-5):916-919.
  • 9Yin Z,Tan S H,Smith F W.Determination of the optical constants of diamond films with a rough growth surface [ J ].Diamond Relat.Mater.,1996,5(12):1490-1496.
  • 10Xia Y B,Sekiguchi T,Zhang W J,et al.Effects of hydrogen ion bombardment and boron doping on (001) polycrystalline diamond films [ J ].J.Cryst.Growth.,2000,213(3-4):328-333.

共引文献6

同被引文献23

  • 1蒋丽雯,王林军,刘健敏,阮建锋,苏青峰,崔江涛,吴南春,史伟民,夏义本.纳米金刚石薄膜的光学性能研究[J].红外与毫米波学报,2006,25(3):195-198. 被引量：7
  • 2张德银,黄大贵,李金华,李坤,但迪迪,董政.ITO衬底上LiTaO_3薄膜的制备与介电特性[J].红外与毫米波学报,2007,26(3):170-173. 被引量：8
  • 3Yang P X, Carroll D L, Ballato J, et al. Electrical properties of SrBi2Ta2o9 ferroelectric thin films at low temperature [J]. Appl Phy Lett. ,2002,81:4583-4585.
  • 4Yang Px, Guo M, Shi M R, et al. Spectroscopic ellipsometry of SrBi2Ta2-xNbxO9 ferroelectric thin films[ J]. J. Appl Phy. ,2005,97(10) : 106106--3.
  • 5Boivin J C, Mairesse G. Recent material developments in fast oxide ion conductors[J]. Chem Mater. ,1998,10(10) : 2870--2888.
  • 6Lee C K, West A R. Thermal behaviour and polymorphism of BIMEVOX oxide ion conductors including the new materials: Bi4V2O11: M; M = La, Y, Mg, B[J]. Solid State Ionics, 1996,86--88 : 235 --239.
  • 7Watanabe A, Das K. Time-dependent degradation due to the gradual phase change in BICUVOX and BICOVOX oxide-ion conductors at temperatures below about 500℃ [ J ]. J. Solid State Chem. ,2002,163:224--230.
  • 8Meng X J, Sun J L, Ye H J. Preparation of highly (100)- oriented metallic LaNiO3 films on Si substrates by a modified metalorganic decomposition technique[J]. Appl Surface Sci, 2001,171 : 68--70.
  • 9Tsukada K, Nagahama T, Sohma M, et al. Preparation of (001) and (114 )-oriented epitaxial thin films of Bi2VO5.5 by a coating pyrolysis process[J]. Thin Solid Films,2003, 425:97--102.
  • 10Kumari N, Krupanidhi S B, Varma K B R. Dielectric, impedance and ferroelectric characteristics of c-oriented bismuth vanadate films grown by pulsed laser deposition [ J ]. Mater Sci Eng B. ,2007,138:22--30.

引证文献2

二级引证文献4

红外与毫米波学报
2007年 第5期

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部