SiO_xN_y薄膜退火过程中N元素的流失对于Si结晶的影响

The effect of nitrogen’s fugacity on the formation of Si nanocrystals in the SiO_xN_y films

通过不同的溅射工艺制得了3组SiOxNy薄膜样品,并进行了不同的退火工艺。在退火后的样品分析结果中发现了薄膜中的N流失现象,并且对N流失促进了Si结晶的这种特点进行了分析和讨论,为今后利用N流失现象进行S i纳米量子点的制备提供了实验和理论依据。

Three SiOxNy samples were synthesized by different sputtering and annealing processes. The phenomena of Nitrogen＇s fugacity were found in the samples after annealing through analyzing the results. The relationship between the phenomena and the formation of Si nanocrystals was researched, which provides the experimental and theoretical base for the fabrication of Si quantum dots.