高导热率及低介电常数的AlN/PI纳米复合薄膜研究

Research on aluminum nitride/polyimide nanocomposite films with high thermal conductivity and low dielectric permittivity

通过将纳米氮化铝加入到原位聚合而成的聚酰亚胺中以提高纳米复合薄膜的导热系数。采用KH550偶联剂对氮化铝粒子表面进行物化处理,以提高有机-无机两相界面的结合力。采用SEM、TGA等对材料的微观结构、热性能等进行了研究。结果显示无机粒子在纳米复合薄膜中分散均匀,并在保持较低的介电性能同时提高了复合材料的热稳定性和导热性能。这样的材料在电子封装材料和印刷线路板中具有很大的应用前景。

To improve the thermal conductivity of the polyimide （PI） films, aluminum nitride （A1N） nanoparticle was dispersed into the PI prepared in situ polymerization. T-aminopropyl triethoxysilane （KH550） was used as a coupling agent for encapsulating A1N nanoparticles to enhance the interface force between organ and inorgan phases. The microstructure and thermal ability were respectively observed by SEM and TGA. The results showed that the de-agglomeration of the encapsulating A1N nanoparticles was clearly observed by SEM. The thermal stability and conductivity of the hybrid film increased obviously while still keeping a low dielectric properties of pure PI. The material is hopefully used as novel printed circuit board and package material of electronic components.