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利用微弧氧化法制备四方相BaTiO_3薄膜的结构特征及铁电性能 被引量:4

Structural characteristics and ferroelectric properties of tetragonal BaTiO_3 films prepared by microarc oxidation
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摘要 利用微弧氧化技术在钛衬底上直接制备了四方相钛酸钡铁电薄膜。利用X射线(XRD)、HP4192A阻抗分析仪和铁电测试系统(FTS)等手段对薄膜样品的相结构、介电和铁电性能进行了研究。结果表明,工艺参数为Ba(OH)2浓度为0.5mol/L,电流密度为150mA/cm^2,温度为57℃,反应时间5-20min的薄膜主要要由四方相BaTiO3构成。在微弧氧化过程中,弧点的连续移动是形成四方相BaTiO3的主要原因。此工艺参数下薄膜的剩余极化值为0.271和-4.62μC/cm^2(Pr),与其对应的矫顽场强度分别为20和-2.8kV/cm(Ec)。该薄膜具有良好的铁电性能。 Tetragonal BaTiO3 ferroelectric films were directly prepared on titanium substrates by DC power microarc oxidation technology (MAO). Crystal phase, dielectric and ferroelectric properties of the films were characterized by X-ray diffraction (XRD), HP4192A precision impedance analyzer and ferroelectric test system (FTS). The results show that the film, which were deposited in 0.5mol/L Ba(OH)2 solution with current density of 150mA/cm^2 at 57℃ and within 10min, is composed mainly by primitive tetragonal BaTiO3. Continues moving of the microarc is the main reason of the formation of tetragonal 13aTiO3. This polarization of this film are 0.271 and--4.62μC/cm^2(Pr), and the corresponding coercive field are 20 and --2.8kV/cm (Ec). And the film has good ferroelectric properties.
出处 《功能材料》 EI CAS CSCD 北大核心 2007年第10期1624-1626,共3页 Journal of Functional Materials
基金 武器装备预研基金资助项目(51412020203JW1609) 广东省自然科学基金资助项目(05006495)
关键词 微弧氧化 铁电薄膜 BATIO3 电滞回线 microarc oxidation ferroelectric film BaTiO3 ferroelectric hysteresis loop
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  • 1邓志威,薛文彬,汪新福,陈如意,来永春.铝合金表面微弧氧化技术[J].材料保护,1996,29(2):15-16. 被引量:91
  • 2BUTYAGIN P I,KHOKHRYAKOV YE V,MAMAEV A I.Microplasma systems for creating coatings on aluminium alloys[J].Materials Letters,2003,57:1748-1751.
  • 3Xue W B,J Am Ceram Soc,1998年,81卷,5期,1365页
  • 4Haertling, G. H. J. Am. Ceram. Soc., 1999, 82(4): 797
  • 5Wada, S.; Tsurumi, T.; Chikamori, H.; Noma, T.; Suzuki, T. Journal of Crystal Growth, 2001, 229: 433
  • 6Oledzka, M.; Brese, N. E.; Riman, R. E. Chem. Mater., 1999, 11: 1931
  • 7Asiaie, R.; Zhu, W. D.; Akbar, S. A.; Dutta, P. K. Chem. Mater., 1996, 8: 226
  • 8Qi, F.; Manabu, H.; Kazumichi, Y. Chem. Mater., 2001, 13(2): 290
  • 9Uchino, K.; Sadanaga, E.; Hirose, T. J. Am. Ceram. Soc., 1989, 72(8): 1555
  • 10Venkateswaran, U.D.; Naik, V. M.; Naik, R. Physical Review B, 1998, 58: 14256

共引文献177

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  • 1HUANG WenBo, LI WenFang & HAN Bing College of Material Science and Engineering, South China University of Technology, Guangzhou 510640, China.Study on BaTiO_3 films prepared by AC power microarc oxidation[J].Science China(Technological Sciences),2009,52(8):2195-2199. 被引量:11
  • 2范素华,胡广达,张丰庆,岳雪涛,任艳霞,徐静.镧、铈掺杂对钛酸钡基介电陶瓷性能的影响[J].硅酸盐通报,2006,25(4):76-79. 被引量:20
  • 3李文芳,韩冰,杜军,彭继华,高引慧.Structural characteristics of BaTiO_3 films prepared by microarc oxidation[J].中国有色金属学会会刊:英文版,2006,16(5):1041-1044. 被引量:3
  • 4赵亚凡,陈传忠,宋明大.PLD制备铁电薄膜工艺参数的研究现状[J].红外与激光工程,2007,36(2):175-178. 被引量:7
  • 5KREUTZ E W, GOTTMANN J. PLD of perovskite coatings for optoelectronics, microelectronics, and microtechnology [ J ]. Journal of the European Ceramic Society, 2004,24(6) :979 -984.
  • 6ZENG J M, WANG H, WANG M, et al. Preparation and ferroelectrie properties of BaTiO3 thin films by atmospheric-pressure metalorganic chemical vapor deposition [J ]. Thin Solid Films, 1998,322( 1 ) : 104 - 107.
  • 7KAISER D L,VAUDIN M D,ROTFER L D, et al. Eptaxial growth of BatiO3 thin films at 600 ℃ by metalorganic chemical vapor deposition [ J ]. Applied Physics Letters. 1995,66 (21 ) : 2801 - 2803.
  • 8KHODOROV A, PEREIRA M, GOMES M J M. Structure and dielectric properties of sol-gel 9/65/35 PLZT thin films[ J]. Journal of the European Ceramic Society, 2005,25 (12) :2285 - 2288.
  • 9GNEDENKOV S V, GORDIENKO P S, KHRISANFOVA O A, et al. Formation of BaTiO3 coatings on titanium by microarc oxidation method [ J ]. Journal of Materials Science,2002,37:2263 - 2265.
  • 10SCHRECKENBACH J,SCHLOTTIG F,MARX G, et al. Preparation and microstructure characterization of anodic spark deposited barium titanate conversion layers [ J ]. Journal Of Materials Research, 1999, 14 ( 4 ) : 1437 - 1443.

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