纳米硅薄膜制备及HIT太阳能电池

Preparation of nc-Si∶H film and HIT solar cell

在较高工作气压（332.5-399Pa）下,采用等离子增强化学气相沉积（PECVD）工艺制备了优质的本征纳米硅薄膜及掺磷的纳米硅薄膜,并采用X射线衍射（XRD）、拉曼散射（Raman）测试技术对其进行了测试和分析。结果表明纳米硅薄膜的XRD谱中存在（111）（、220）和（331）峰位;Raman谱中显示出其薄膜中的晶粒的大小（2-5nm）符合纳米晶的要求。将制备的纳米硅薄膜初步用于栅极/ITO/n-nc-Si∶H/i-nc-Si∶H/p-c-Si/Al/Ag结构的异质结（HIT）太阳能电池,开路电压（Voc）达404mV,短路电流密度（Jsc）可达到34.2mA/cm^2（AM1.5,100mW/cm^2,25℃）。

Nano-crystalline silicon films （nc-Si ： H） were prepared by plasma enhanced chemical vapor deposition （PECVD） under the high deposition pressure（332.5-399Pa） ,which was used for the HIT solar cells （grid electrode/ITO/n-nc-Si： H/i-nc-Si ： H/p-c-Si/Al/Ag） with nano-crystalline silicon （nc-Si ： H） film as the intrinsic layer and doped nano-crystalline silicon film as the N-layer. The structure of the film was investigated by XRD and Raman. The results show that the size of crystal grains was about 2-6nm,the peaks of （111）, （220） and （331） could all been shown in the XRD spectrum. Performances of the solar cell were measured,the open-circuit voltage Voc was 404mV,short-circuit current Jac was 34.2mA/cm^2 （1.5AM, 100mW/cm^2）