电极对PZT铁电薄膜的铁电和光学性能的影响

Influence of Electrodes on Ferroelectric and Optical Properties of PZT Thin Films

采用射频磁控溅射(RF Magnetron Sputtering)工艺在Si片上分别制备Pt/Ti和LaNiO3(LNO)底电极,然后在不同的底电极上沉积PbZr0.52Ti0.48O3(PZT)铁电薄膜,在大气环境中对沉积的PZT薄膜进行快速热退火处理(RTA)。用X射线衍射(XRD)分析PZT薄膜的相结构和结晶取向,原子力显微镜(AFM)分析薄膜的表面形貌和微结构。再沉积LNO作为顶电极制成"三明治"结构的LNO/PZT/Pt和LNO/PZT/LNO样品,用RT66A标准铁电测试系统分析样品的电学特性,傅立叶红外光谱仪分别测得样品的反射谱和透射谱。分析了不同电极对PZT铁电薄膜的铁电和光学性能的影响。

Pb（ Zr0.52Ti0.48 ）O3 （PZT） ferroelectric thin films were grown on Ti buffered Pt（ 111 ） and LaNiO3 （LNO） thin film bottom electrodes on Si substrate by rf magnetron sputtering, followed by a rapid thermal annealing （RTA） process in air ambience. X - ray diffraction （XRD） revealed the annealed PZT films are polycrystalline with pure perovskite phase. Grain size of PZT films grown on LNO and Pt analyzed by atomic force microscopy （AFM） are 15 -60nm and 150 -400nm, respectively. Ferroelectric property of LNO/PZT/Pt and LNO/PZT/LNO capacitors were carried out by RT66A standardized ferroelectric test system. Reflectance spectrum and transmission spectrum of LNO/PZT/Pt and LNO/PZT/LNO capacitors samples were measured by Fourier - infrared optical spectrometer. The influence of different electrodes on ferroelectric and optical properties of PZT thin films was analyzed.