摘要
对透明Al_2O_3陶瓷进行了Fe元素的离子注入。用“Van der Pauw”方法测定注入层的电阻率,并结合Hall效应测量,确定样品载流子浓度和迁移率。 本文主要阐述未经退火和退火的Fe^(2+)注入Al_2O_3陶瓷表面电性能,并应用Rutherford背散射技术等方法进行分析比较,试图得到有关晶格损伤及恢复、注入离子的纵向浓度分布,缺陷等信息。最后,简要地叙述了注入层的导电机制。
The translucent aluminium oxide is implanted with Fe^(2+) ions. The resistivity of implanted films and 'Hall effect' are measured by the 'Van der pauw' method, and the carrtier concentration and mobility are determined.In this paper, surface electrical properties of Fe ion implanted Al2O_3 with and without annealing are compared. In order to obtaining some informations for lattice damage and recovery, longitudinal concentration distribution of implanted ions and defects, the Rutherford baokscattering technique, X-ray electron spectra and X-ray diffraction are used.Finally, the film conduction mechanism is discussed briefly.
出处
《硅酸盐学报》
EI
CAS
CSCD
北大核心
1990年第3期237-244,共8页
Journal of The Chinese Ceramic Society
基金
中国科学院上海冶金所离子束开放实验室科学基金资助
关键词
陶瓷
氧化铝
退火
铁
离子注入
translucent aluminium oxide
Hail effect
'Van der Pauw' mcthod
Rutherford backscattering technique