β-SiC晶须缺陷的HREM观察

HREM OBSERVATION OF DEFECT OF β-SiC WHISKERS

用高分辨电镜(HREM)观察了β-SiC晶须的微观结构和缺陷,得到了分辨率为2(?)的高分辨象。结果表明,在β-SiC晶须中普遍存在层错,这些层错存在于(111)面和{111}面上。有些层错终止于晶体内部,形成Burgers矢量b=<111>α/3的Frank不全位错,此外还发现了晶须表面的生长附属物和晶须内的多重孪晶;分析了β-SiC晶须的长大机制。

In this paper, the microstructure and defect of β-SiC whishers are observed directly by high resolution electron microscope (HREM) and high resolution photographs of 2(?) resolution are obtained. The results show that there are many stacking faults parellel to the (111) and {111} planes in the silicon carbide whiskers. Frank partial dislocations and multiplicate twins and the complicated atom arrangement in the twin regions are also discovered. Finally, the growth mechanism of β-SiC whisker is analyzed.