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Y_2O_3稳定ZrO_2薄膜的结构和光学特性 被引量:4

Structural And Optical Properties of Y_2O_3 Stabilized ZrO_2 Thin Films
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摘要 用电子束蒸发法制备出四种不同Y2O3含量的Y2O3稳定ZrO2(YSZ)薄膜,用X射线衍射和透射光谱测定薄膜的结构和光学性能.结果表明:随着Y2O3含量的增加,ZrO2薄膜从单斜相向高温相(四方相和立方相)转变,获得了结构稳定的YSZ薄膜;YSZ薄膜的晶粒尺寸都比ZrO2薄膜的大,但随着Y2O3加入量的增加,晶粒尺寸有减小的趋势,薄膜表面也趋向光滑平整.所有YSZ薄膜的透射谱线都与ZrO2薄膜相似,在可见光和红外光区都有较高的透过率.Y2O3的加入还可以改变薄膜的折射率,在一定范围内可得到所需的任意折射率. Four kinds of Y2O3 stabilized ZrO2 (YSZ) thin films with different Y2O3 content have been prepared by electron-beam evaporation method. The structural and optical properties of thin films were measured by X-ray diffraction spectra and transmission spectra. These results indicate that ZrO2 thin film changes from monoclinic phase to high temperature phase (tetragonal and cubic) with the increase of Y2O3 content and the structural stabilized thin films are obtained; the grain sizes of YSZ thin films are bigger than that of ZrO2 thin film. However,the grain size of YSZ thin films would decrease with the increase of Y2O3 content. The transmission spectra of YSZ thin films are similar to that of ZrO2 thin film and all of them have high transmission. Furthermore, the refractive index of YSZ thin films would change with the addition of Y2O3 and get the random refractive index in a certain range.
出处 《光子学报》 EI CAS CSCD 北大核心 2007年第6期1092-1096,共5页 Acta Photonica Sinica
关键词 YSZ薄膜 Y2O3含量 结构 光性 YSZ thin film Y2O3 content Structure Optical properties
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参考文献14

  • 1AMOR S B,ROGIER B,BAND G.Characterization of zirconia films deposited by r.f.magnetron sputtering[J].Mater Sci Eng B,1998,57(1):28-39.
  • 2BOULOUZ M,BOULOUZ A,GIANI A,et al.Influence of substrate temperature and target composition on the properties of yttria-stabilized zirconia thin films grown by r.f.reactive magnetron sputtering[J].Thin Solid Films,1998,323 (1-2):85-92.
  • 3MENGUCCI P,BARUCCA G,CARICATO A P,et al.Effects of annealing on the microstructure of yttria-stabilised zirconia thin films deposited by laser ablation[J].Thin Solid Films,2005,478(1-2):125-131.
  • 4BOULOUZ M,TCHELIEBOU F,BOYER A.Electrical and optical properties of magnetron-sputtered Y2O3 stabilized ZrO2 thin films[J].Journal of the European Ceramic Society,1997,17(14):1741-1748.
  • 5PAWLEWICZ W T,HAYS D D.Microstructure control for sputter-deposited ZrO2,ZrO2 · CaO and ZrO2 · Y2O3[J].Thin Solid Films,1982,94(1):31-45.
  • 6TCHELIEBOU F,BOULOUZ M,BOYER A.Electrical behaviour of thin ZrO2 films containing some ceramic oxides[J].J Mater Sci Eng B,1996,38(1-2):90-95.
  • 7CHEVALIER S,KILO M,BORCHARDT G,et al.MOCVD deposition of YSZ on stainless steels[J].Appl Surf Sci,2003,205(1):188-195.
  • 8BOULOUZ M,MARTIN L,BOULOUZ A,et al.Effect of the dopant content on the physical properties of Y2O3-ZrO2 and CaO-ZrO2 thin films produced by evaporation and sputtering techniques[J].Materials Science and Engineering B,1999,67 (3):122-131.
  • 9LEVICHKOVA M,MANKOV V,STARBOV N,et al.Structure and properties of nanosized electron beam deposited zirconia thin films[J].Surface and Coatings Technology,2001,141(1):70-77.
  • 10朱勇,沈伟东,叶辉,顾培夫.磁控反应溅射SiN_x薄膜的研究[J].光子学报,2005,34(1):154-157. 被引量:15

二级参考文献19

  • 1魏坤 石燕 贺伦燕.Acta Chimica Sinica(化学学报),1998,56(6):589-589.
  • 2苏锵 林君等 .Chinese Journal of Luminescence(Supp)(发光学报(增刊)),1996,17:1-1.
  • 3Powell M J,Orton J W. Characteristics of amorphous silicon staggered-electrode thin-film transistors.Appl Phys Lett, 1984,45(2):171~173.
  • 4Solgaard O,Sandejas F S A, Bloom D M. Deformable grating optical modulator. Optics Lett,1992,17(9):688~690.
  • 5Kishore R,Singh S N,Das B K. Screen printed titanium oxide and PECVD silicon nitride as antireflection coating on silicon solar cells.Renewable Energy, 1997,12(2):131~135.
  • 6Lee S H,Lee I,Yi J. Silicon nitride films prepared by high-density plasma chemical vapor deposition for solar cell applications.Surf Coat Technol,2002,153(1):67~71.
  • 7Qiu X,yarmati E. Composition and properties of SiNx films produced by reactive r.f. magnetron sputtering. Thin Solid Films,1987,151(2):223~233.
  • 8Xu Gang,Jin Ping,Tazawa Masato, et al. Optical investigation of silicon nitride thin films deposited by r.f. magnetron sputtering.Thin solid Films,2003,425(1):196~202.
  • 9Shi J Y,Yu L P,Wang Y Z,et al.In fluence of different types of threading dislocations on the carrier mobility and photoluminescence in epitaxial GaN.Appl Phys Lett,2002,80(13): 2293~2295
  • 10Moore W J,Freitas J A, Jr,et al.Magneto-optical studies of free-standing hydride-Vapor-phase epitaxial GaN.Phys Rev(B), 2002,65(8):0810201(R)

共引文献25

同被引文献38

  • 1邵淑英,范正修,范瑞瑛,贺洪波,邵建达.沉积温度对电子束蒸发沉积ZrO_2薄膜性质的影响[J].中国激光,2004,31(6):701-704. 被引量:20
  • 2申雁鸣,贺洪波,邵淑英,范正修.沉积温度对电子束蒸发HfO_2薄膜残余应力的影响[J].中国激光,2006,33(6):827-831. 被引量:8
  • 3孔德军,张永康,陈志刚,张雷洪,鲁金忠.激光热处理对化学沉积Ni-P合金薄膜性能的影响[J].中国激光,2007,34(6):871-875. 被引量:9
  • 4ROCA ICABARROCAS P,FONTCUBERTA IMORRAL A,KALACHE B.Microcrystalline silicon thin films grown by pecvd.growth mechanisms and grain size control [J].Solid State Phenomena ,2003,93:257-268.
  • 5WRONSKI C R,COLLINS R W,JIAO L,et al.Stable a-si:h based-multijunction solar cells with guidance from real time optics[R].Annual report,1998-1999.
  • 6ZHOU Jiang-Huai,KAZUYUKI I,TETSUJI Y,et al.Control of crystallinity of microcrystalline silicon film grown on insulating glass substrates[J].Journal of Non-Crystalline Solids,1998,227-230:875-860.
  • 7DROZ C,VALLAT-SAUVAIN E,BAILAT J,et al.Application of raman spectroscopy for the microstructure characterisation in microcrystalline silicon solar cells[C].17th Eruopean Photovoltaic Solar Energy Conference,Munich Germany,2001:2917-2920.
  • 8CULLITY B D.Elements of X-ray diffraction[M].Addison-Wesley Publishing Company,Inc,1978:283-300.
  • 9CAO Jin,JIANG Xue-yin, Zhang Zhi-lin,et al.MoOx modified Ag anode for top-emitting organic light-emitting devices [J].Applied Physics Letters,2006,89(25):252108-1-3.
  • 10VAN SLYKE S A,CHEN C H,TANG CW.Organic electroluminescent devices with improved stability [J].Applied Physics Letters,1996,69(15):2160-2162.

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