摘要
InP器件拥有高频截止的优点,它一般用来测量三极管以及模拟器件。对于高速应用场合来说,与GaAs以及SiGe相比,InP是更具有成本效益的方案。
InP devices exhibit the highest cutoff frequency, a figure-of-merit that measures the speed of a transistor, among all semiconductor technologies in production today. For high-speed applications, InP technology has been proven to be a very cost effective solution, competing very well with GaAs and SiGe technologies.
出处
《电子设计应用》
2007年第5期120-120,10,共1页
Electronic Design & Application World
