摘要
采用磁控溅射制备了NiFe各向异性磁电阻(AMR)薄膜,经过光学曝光及离子刻蚀将NiFe薄膜制成了宽度w=20μm、厚度t=20nm、长度l=2.5mm的AMR元件。测量了NiFe元件的磁电阻效应。考虑沿宽度方向退磁场的非均匀性,计算了磁电阻比率。结果表明,理论和实验符合。
NiFe thin films were prepared with magnetron sputtering.By using optical lithography and ion etching,NiFe films were patterned into AMR element with width of 20μm,thickness of 20nm,and length of 2.5mm.The Anisotropic magnetoresistance of NiFe element were measured.Taking into account the non-uniformity of demagnetizing field along the width of AMR element,Magnetoresistance ratio have been numerically calculated.The results have shown that theoretical results are in good agreement with experiment.
出处
《功能材料与器件学报》
EI
CAS
CSCD
北大核心
2007年第5期449-452,共4页
Journal of Functional Materials and Devices
基金
国家自然科学基金(No.50471093)
国防基础科研项目(No.A1420060203)
关键词
各向异性磁电阻
AMR元件
非均匀退磁场
anisotropic magnetoresistance
AMR element
non-uniform demagnetizing field
