VLS机制下SiC晶须的生长

Growth of SiC Whiskers by VLS Mechanism

采用化学气相沉积(CVD)法以气-液-固(VLS)机制生长了碳化硅(SiC)晶须,系统研究了基片表面的气流状况、生长温度和反应室总气压等对SiC晶须形貌的影响。研究结果表明:当基片表面存在较强的平流状态时,以生长SiC薄膜为主,很难形成晶须;生长温度及反应室总气压对晶须的直径有较大影响,合适的生长温度以及较高的总压有利于晶须的生长。

Silicon carbide（SiC）whiskers were synthesized by chemical vapor deposition（CVD）technique via the vapor-liquid-solid（VLS）mechanism.The effect of the growth temperature,the total pressure in the reaction chamber and the gas flow rate near the substrate was studied.The results show that low gas flow rate near the substrate is necessary in SiC whiskers growth.Appropriate growth temperature and higher total pressure in the reaction chamber are suitable for SiC whiskers growth.