电化学沉积制备一维ZnSe纳米材料

Electrochmical Deposition of One-dimensional ZnSe Nano-materials

在草酸溶液中,采用二次阳极氧化法得到了多孔阳极氧化铝膜(AAO).以AAO为模板,在ZnSO4、Na2SO4和H2SeO3的混合水溶液中进行直流电沉积,在孔内组装ZnSe半导体纳米线,溶去模板后,获得粗细均匀,直径约为60 nm,长度约为0.5μm的纳米线,与模板的孔径一致.在制备过程中,无需对模板进行去除阻挡层,喷金或预镀金属等处理过程,是直接在纳米孔内电沉积,形成半导体纳米线阵列.此方法工艺简单,操作方便,容易获得半导体的一维纳米材料.SPM、TEM测试结果表明,纳米线为六方晶型结构.

Porous anodic aluminum oxide templates （AAO） have been prepared by DC anodic oxidation in the solution of oxalic acid. Without dissolving the barrier layer, ZnSe nanowires have been prepared in the mixed solution of ZnSO4,Na2SO4 and H2SeO3 by DC eleetrodeposition in the holes of AAO template. These nanowires have uniform diameters of about 60nm and lengths up to 0.5 μm after dissolve template. Without dissolving the barrier layer and depositing metal film during preparation of AAO, ZnSe nanowires have been prepared by DC eleetrodeposition in holes of AAO template, this preparation is simple, therefore alquirability of ZnSe nanowires become facilitate. SPM and TEM investigations demonstrate that these nanowires have a crystalline structure of hexagonal ZnSe crystal.