纳米压印技术中模板表面的气相法抗粘连修饰

The Preparation of Anti-sticking Layers on Stamps of Nano-imprint Lithography Technology via Vapor Deposition Process

研究了采用全氟四氢辛基硅烷(F13-TCS)对纳米压印技术中所用SiO2模板进行表面修饰的情况,分析了用气相法在SiO2模板表面形成F13-TCS单分子膜的形成过程及化学机理,并用X射线光电子能谱仪(XPS)和视频光学接触角测试仪对模板修饰表面的元素成分、价态和表面能进行了测试表征,用原子力显微镜(AFM)对压印过程中的模板结构及模板复制结构进行了对比分析.结果表明,通过F13-TCS对SiO2模板的表面修饰,可以大大降低模板与压印聚合物层之间的相互作用力,在纳米压印过程中实现结构较好的转移、复制.

F13-TCS film was deposited on the surface of SiO2 stamp through vapor deposition process. The formation process and chemical mechanism of it was studied. The contents of element and valence band were characterized by XPS, the contact angle and surface energy were measured by optical contact angle measuring device, and the structure of stamp and duplicate structure of stamp were contrasted by AFM. The research results indicate that the interaction force between the stamp and polymer layers decrease greatly through F13-TCS modifying the surface of SiO2 stamp. It is favorable for shifting and replication of the stamp in nanoimprint lithography.