Silicon Light Emitting Devices in CMOS Technology

与不同结构射出设备的二盏硅灯在标准 0.35 μm 被认识到互补 metal-oxide-semiconductor (互补金属氧化物半导体) 技术。他们在反向的故障模式操作并且能在 8.3 V 被打开。输出 13.6 nW 的光力量，分别地， 12.1 nW 在 10 V 和 100 妈被测量计算轻排放紧张是超过 1 mW/cm 2 。二台设备的光系列在有 760 nm 附近的一座清楚的山峰的 600 790 nm 之间。

Two silicon light emitting devices with different structures are realized in standard 0.35pro complementary metal-oxide-semiconductor （CMOS） technology. They operate in reverse breakdown mode and can be turned on at 8.3 V. Output optical powers of 13.6nW and 12.1 n W are measured at 10 V and l OOmA, respectively~ and both the calculated light emission intensities are more than 1 mW/cm^2. The optical spectra of the two devices are between 600-790 nm with a clear peak near 760 nm.