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Extremely Low Density InAs Quantum Dots with No Wetting Layer

Extremely Low Density InAs Quantum Dots with No Wetting Layer
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摘要 Extremely low density InAs quantum dots (QDs) are grown by molecular beam droplet epitaxy. The gallium deposition amount is optimized to saturate exactly the excess arsenic atoms present on the GaAs substrate surface during growth, and low density InAs/GaAs QDs (4× 10^6 cm^-2) are formed by depositing 0.65 monolayers (MLs) of indium. This is much less than the critical deposition thickness (1.7 ML), which is necessary to form InAs/GaAs QDs with the conventional Stranski-Krastanov growth mode. The narrow photoluminescence linewidth of about 24 meV is insensitive to cryostat temperatures from IO K to 250K. All measurements indicate that there is no wetting layer connecting the QDs. Extremely low density InAs quantum dots (QDs) are grown by molecular beam droplet epitaxy. The gallium deposition amount is optimized to saturate exactly the excess arsenic atoms present on the GaAs substrate surface during growth, and low density InAs/GaAs QDs (4× 10^6 cm^-2) are formed by depositing 0.65 monolayers (MLs) of indium. This is much less than the critical deposition thickness (1.7 ML), which is necessary to form InAs/GaAs QDs with the conventional Stranski-Krastanov growth mode. The narrow photoluminescence linewidth of about 24 meV is insensitive to cryostat temperatures from IO K to 250K. All measurements indicate that there is no wetting layer connecting the QDs.
出处 《Chinese Physics Letters》 SCIE CAS CSCD 2007年第4期1025-1028,共4页 中国物理快报(英文版)
基金 Supported by the National Natural Science Foundation of China under Grant No 60625405, the Special Fund for Major State Basic Research Project, and the National High Technology Research and Development Programme of China.
关键词 DROPLET EPITAXY SINGLE PHOTONS PHOTOLUMINESCENCE FABRICATION DROPLET EPITAXY SINGLE PHOTONS PHOTOLUMINESCENCE FABRICATION
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