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An Electroluminescence Delay Time Model of Bilayer Organic Light-Emitting Diodes 被引量:1

An Electroluminescence Delay Time Model of Bilayer Organic Light-Emitting Diodes
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摘要 Based on the mechanism of injection, transport and recombination of the charge carriers, we develop a model to calculate the delay time of electroluminescence (EL) from bilayer organic light emitting diodes. The effect of injection, transport and recombination processes on the EL delay time is discussed, and the relationship between the internal interface barrier and the recombination time is revealed. "]~he results show that the EL delay time is dominated by the recombination process at lower applied voltage and by the transport process at higher applied voltage. When the internal interface barrier varies from 0.15 eV to 0.3 eV, the recombination delay time increases rapidly~ while the internal interface barrier exceeds about 0.3eV~ the dependence of the recombination delay time on applied voltage is almost undiversified, which may serve as a guideline for designing of a high-speed EL response device. Based on the mechanism of injection, transport and recombination of the charge carriers, we develop a model to calculate the delay time of electroluminescence (EL) from bilayer organic light emitting diodes. The effect of injection, transport and recombination processes on the EL delay time is discussed, and the relationship between the internal interface barrier and the recombination time is revealed. "]~he results show that the EL delay time is dominated by the recombination process at lower applied voltage and by the transport process at higher applied voltage. When the internal interface barrier varies from 0.15 eV to 0.3 eV, the recombination delay time increases rapidly~ while the internal interface barrier exceeds about 0.3eV~ the dependence of the recombination delay time on applied voltage is almost undiversified, which may serve as a guideline for designing of a high-speed EL response device.
出处 《Chinese Physics Letters》 SCIE CAS CSCD 2007年第8期2394-2397,共4页 中国物理快报(英文版)
基金 Supported by the Distinguished Youth Foundation of Hunan Province under Grant No 0333Y1008, the Science Foundation for Post doctorate of China under Grant No 2004035083, the Natural Science Foundation of Hunan Province under Grant No 063320034, and the Science Foundation of Central South University under Grant No 0601059.
关键词 coated conductor buffer layer self-epitaxy CeO2 coated conductor, buffer layer, self-epitaxy, CeO2
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