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Influence of Phase Transition of Starting Materials on Growth of GaN Nanomaterials by CVD

Influence of Phase Transition of Starting Materials on Growth of GaN Nanomaterials by CVD
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摘要 Ground by mechanical ball milling under certain conditions, β-Ga2O3 powders can transit to ε-Ga2O3 ones. As starting materials, Ga2O3 powders treated by different methods are used to prepare GaN nanomaterials. It is found that the morphologies of GaN nanomaterials are quite different due to the phase transition of Ga2O3 from β-Ga203 to ε-Ga203. Ground by mechanical ball milling under certain conditions, β-Ga2O3 powders can transit to ε-Ga2O3 ones. As starting materials, Ga2O3 powders treated by different methods are used to prepare GaN nanomaterials. It is found that the morphologies of GaN nanomaterials are quite different due to the phase transition of Ga2O3 from β-Ga203 to ε-Ga203.
出处 《Chinese Physics Letters》 SCIE CAS CSCD 2007年第8期2401-2404,共4页 中国物理快报(英文版)
关键词 coated conductor buffer layer self-epitaxy CEO2 coated conductor, buffer layer, self-epitaxy, CeO2
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参考文献19

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