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Defect-Bound Carrier Mediated Room-Temperature Ferromagnetism in Co-Doped ZnO Powders

Defect-Bound Carrier Mediated Room-Temperature Ferromagnetism in Co-Doped ZnO Powders
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摘要 We prepare pure single-phase Co:ZnO powders introducing controllable interstitial Zni by Zn vapour annealing. The as-ground powder shows that no room-temperature ferromagnetism (RT-FM) exists, while the Zn vapour treated samples exhibit unambiguous RT-FM with a maximum magnetic moment of 0.2μB/Co. The FM of Co:ZnO strongly depends on the Zn diffusion process, suggesting that not only carriers but also Zni defects play an important role in mediating FM in diluted magnetic semiconductors. A new core-shell model is proposed to interpret the mixture behaviour of FM and paramagnetism observed in the Zn vapour annealed Co:ZnO powders. We prepare pure single-phase Co:ZnO powders introducing controllable interstitial Zni by Zn vapour annealing. The as-ground powder shows that no room-temperature ferromagnetism (RT-FM) exists, while the Zn vapour treated samples exhibit unambiguous RT-FM with a maximum magnetic moment of 0.2μB/Co. The FM of Co:ZnO strongly depends on the Zn diffusion process, suggesting that not only carriers but also Zni defects play an important role in mediating FM in diluted magnetic semiconductors. A new core-shell model is proposed to interpret the mixture behaviour of FM and paramagnetism observed in the Zn vapour annealed Co:ZnO powders.
出处 《Chinese Physics Letters》 SCIE CAS CSCD 2007年第10期2955-2958,共4页 中国物理快报(英文版)
基金 Supported by the National Natural Science Foundation of China under Grant No 90306015, the National Basic Research Programme of China under Grant No 2007CB31407 and the International S&T Cooperation Programme of China under Grant No 2006DFA53410.
关键词 ELECTRIC PROPERTIES FILMS ZN1-XCOXO ABSENCE ELECTRIC PROPERTIES FILMS ZN1-XCOXO ABSENCE
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