摘要
We propose a simple single-layer magnetic microtrap configuration which can trap an array of magneticallytrapped Bose-Einstein condensate. The configuration consists of two series of parallel wires perpendicular to each other and all of the crossing points are cut off for maintaining the uniformity of the current. We analyse the trapping potential, the position of trapping centres and the uniformity of the array of the traps. The trapping depth and trapping frequency with different parameters are also calculated. Lastly, the effect of the cut-off crossing points, dissipate power, chip production are introduced concisely.
We propose a simple single-layer magnetic microtrap configuration which can trap an array of magneticallytrapped Bose-Einstein condensate. The configuration consists of two series of parallel wires perpendicular to each other and all of the crossing points are cut off for maintaining the uniformity of the current. We analyse the trapping potential, the position of trapping centres and the uniformity of the array of the traps. The trapping depth and trapping frequency with different parameters are also calculated. Lastly, the effect of the cut-off crossing points, dissipate power, chip production are introduced concisely.
基金
Supported by the National Natural Science Foundation of China under Grant Nos 10334050 and 10474105, the State Key Basic Research Programme of China under Grant No 2006CB921202, and the Key 0riental Project of Chinese Academy of Sciences under Grant Nos KGCX2-SW-100 and KGCX3-SYW-405.
