摘要
Cr-doped InAs self-organized diluted magnetic quantum dots （QDs） are grown by low-temperature molecularbeam epitaxy. Magnetic measurements reveal that the Curie temperature of all the InAs：Cr QDs layers with Cr/In flux ratio changing from 0.026 to 0.18 is beyond 400 K. High-resolution cross sectional transmission electron microscopy images indicate that InAs：Cr QDs are of the zincblende structure. Possible origins responsible for the high Curie temperature are discussed.
Cr-doped InAs self-organized diluted magnetic quantum dots （QDs） are grown by low-temperature molecularbeam epitaxy. Magnetic measurements reveal that the Curie temperature of all the InAs：Cr QDs layers with Cr/In flux ratio changing from 0.026 to 0.18 is beyond 400 K. High-resolution cross sectional transmission electron microscopy images indicate that InAs：Cr QDs are of the zincblende structure. Possible origins responsible for the high Curie temperature are discussed.
基金
Supported by the National Natural Science Foundation of China under Grant Nos 10334030, 10425419 90301007 and 60521001.
