电弧等离子体法制备纳米Ce-NiO的气敏特性

Gas Sensitive Property of Nano Ce NiO Prepared by Arc Plasma Method

用Ｈ２＋Ａｒ电弧等离子体法制备纳米Ｃｅ－ＮｉＯ并研究其气敏特性。实验结果表明：与通常用作氧敏传感器的Ｐ型ＮｉＯ半导体材料相比，Ｈ２＋Ａｒ电弧等离子体法制备的纳米Ｃｅ－ＮｉＯ气敏材料表现出一定的ｎ型导电性，对乙炔具有很好的选择性和较高的灵敏度；其气敏特性与纳米Ｃｅ－ＮｉＯ晶粒的显微结构有关。

Nano Ce NiO was prepared by H 2+Ar arc plasma method and its property of gas sensitivity was studied. Compared with NiO,a kind of p type semiconductor usually used for oxygen sensor, nano Ce NiO exhibits certain n type semiconductor feature to some reductive gas at some temperatures. At the same time, the results show that nano Ce NiO has excellent selectivity and good sensitivity to C 2H 2. The mechanism of gas sensitivity of nano Ce NiO is relevant to its microstructure.