摘要
用直流溅射法在ITO玻璃衬底上溅射金属Ti膜后再用辉光放电法沉积a-Si,研究了钛的硅化物的形成,利用XPS、RBS分析,确定了反应生成物为TiSi2,且生成物十分有效地阻挡了ITO中的In的扩散;用US/VIS分光光度计测量了生成物的透过率发现其透过率在紫外部分较ITO膜提高;测试了Ti/a-Si界面的I-V特性,发现界面无势垒;测量了生成物的电阻率,数量级为几十μΩ·cm数量级。该钛的硅化物膜可用于非晶硅太阳电池的前电极。
After direct current sputtering Ti on ITO glass substrate and depositing a Si by rf flow discharge method,the formation of Ti Silicide was studied.XPS and RBS analyses were used to determine the TiSi 2 product and found it could stop the diffusion of In atoms of ITO effectively. The US/VIS spectrophotometer was used to measure the transmissivity of TiSi 2 film and found the transmissivity of TiSi 2 was higher than that of ITO film. No potential was found after testing the characteristic of Ti/a Si interface. The resistivity quantity series of the product was about tens μΩ·cm. This Ti Silicide film could be used in a Si∶H sollar cells as a top electrode
出处
《功能材料》
EI
CAS
CSCD
北大核心
1997年第3期309-311,共3页
Journal of Functional Materials
关键词
XPS分析
太阳电池
氢化非晶硅
钛硅化物
Ti Si compound,XPS analysis,RBS analysis, interface characteristic