可用于 a-Si∶H 太阳电池的钛硅化物的研究

Study of Ti Silicide Film Used in a Si∶H Solar Cells

用直流溅射法在ＩＴＯ玻璃衬底上溅射金属Ｔｉ膜后再用辉光放电法沉积ａ－Ｓｉ，研究了钛的硅化物的形成，利用ＸＰＳ、ＲＢＳ分析，确定了反应生成物为ＴｉＳｉ２，且生成物十分有效地阻挡了ＩＴＯ中的Ｉｎ的扩散；用ＵＳ／ＶＩＳ分光光度计测量了生成物的透过率发现其透过率在紫外部分较ＩＴＯ膜提高；测试了Ｔｉ／ａ－Ｓｉ界面的Ｉ－Ｖ特性，发现界面无势垒；测量了生成物的电阻率，数量级为几十μΩ·ｃｍ数量级。该钛的硅化物膜可用于非晶硅太阳电池的前电极。

After direct current sputtering Ti on ITO glass substrate and depositing a Si by rf flow discharge method,the formation of Ti Silicide was studied.XPS and RBS analyses were used to determine the TiSi 2 product and found it could stop the diffusion of In atoms of ITO effectively. The US/VIS spectrophotometer was used to measure the transmissivity of TiSi 2 film and found the transmissivity of TiSi 2 was higher than that of ITO film. No potential was found after testing the characteristic of Ti/a Si interface. The resistivity quantity series of the product was about tens μΩ·cm. This Ti Silicide film could be used in a Si∶H sollar cells as a top electrode