ZC36微电流测试仪测量非晶硅有效隙态密度

Measurement of Effective Density of Gap States in Amorphous Silicon with Type of ZC36 Microgalvanometer

首次报告了用国产的廉价的ＺＣ３６型微电流测试仪测量非晶硅有效隙态密度的原理和结果，其结果与美国生产的昂贵的４０６１Ａ型半导体综合测试仪测量结果相一致。

The principle and result of measuring effective density of gap states in amor- phous silicon with type of ZC36 micmgalvanometer which is cheap equipment made in P R China are first reported in this paper. The result is in agreement with one measured with type of 4061A semiconductor synthetical measurement equipment which is expensive made in U . S. A.