用标记 Xe^+ 及背散射分析研究 Nb 的阳极氧化机理

Study on the mechanism of the anodization of niobium by using ion implanting Xe + markers and RBS analysis

用离子注入不同深度Ｘｅ原子标记法和卢瑟福背散射分析技术、Ｘ射线谱、Ａｕｇｅｒ电子谱法分析研究了Ｎｂ在质量分数ｗ为５％柠檬酸铵溶液中阳极氧化成膜机制，计算了不同阳极氧化电压下离子迁移数。结果表明阳极氧化膜主要是由于Ｎｂ离子和Ｏ离子相向迁移，随着阳极氧化电压的升高，生成氧化膜的区域向外（溶液侧）迁移，氧化膜的成分是Ｎｂ２Ｏ５。

The mechanism of anodic oxidation on niobium in the solution of aqueous ammonium citrate ( w =5%) was studied with the layers of ion implanted Xe atom markers in different depth and analysed by the methods of RBS, X ray and AES and the ions migration numbers under different anodic potentials were caculated. The main reason for the forming of oxide films is the migration of both metal cations and oxygen anions in contrary directions and the area in which the oxide film formed is nearer the sample surface, which is connected with the solution, with the higher anodic potential. The composition of the oxide film is Nb 2O 5.