pH值对KDP晶体位错结构的影响

Influence of pH Value on Dislocation Structure of KDP Crystal

在一定的过饱和度下,分别用点状和片状籽晶在不同pH值溶液中生长出了KDP晶体。利用化学腐蚀法对KDP晶体的不同晶面进行了腐蚀,得到了清晰的位错蚀坑。应用光学显微镜对位错蚀坑的分布特点和密度做了观察分析,发现很多位错蚀坑成线状排布。pH值对KDP晶体位错密度有较大影响,低pH值条件下生长出的晶体位错密度较大。测试了KDP晶体样本的透过率,结果表明位错密度对KDP晶体的透过率没有明显的影响。

Under proper super saturation, KDP crystals were grown in the solution with different pH values by use of point seed and plate-like seed,respectively. Proper etchants were chosen to etch different planes of KDP crystal. Clear dislocation etching pits were obtained. The distribution characteristics and density of dislocation etching pits were observed and analyzed by optical microscopy. It was found that lots of etching pits were in line. pH value have large influence on dislocation density of KDP crystal. The sample grown from the solution with low pH value has bigger dislocation density. The transmittance of KDP crystal samples was tested. The result showed that there was no direct relationship between dislocation density and KDP crystal transmittance.